Methods of forming a metal contact on a silicon substrate

US8338275B2 · kind B2 · utility

Assignee

• Innovalight, Inc. · US

Inventors

• Malcolm Abbott · Sunnyvale, US
• Daniel Kray · Glückstadt, DE

Key dates

• Filing date: Jun 29, 2011
• Grant date: Dec 25, 2012
• Expiry date: Jun 29, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

A method of forming a metal contact on a silicon substrate is disclosed. The method includes depositing a nanoparticle ink on a substrate surface in a pattern, the nanoparticle ink comprising set of nanoparticles and a set of solvents. The method also includes heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a densified nanoparticle layer with a nanoparticle layer thickness of greater than about 50 nm. The method further includes depositing an SiNx layer on the substrate surface, SiNx layer having a SiNx layer thickness of between about 50 nm and about 110 nm; exposing the substrate to an etchant that is selective to the densified nanoparticle layer for a second time period and at a second temperature in order to create a via; and forming a metal contact in the via, wherein an ohmic contact is formed with the silicon substrate.