Manufacturing method for a nanocrystal based device covered with a layer of nitride deposited by CVD
US8338276B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 30, 2009 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Oct 5, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to methods of manufacturing a structure having semi-conductor material nanocrystals on a dielectric material substrate by chemical vapour deposition (CVD), the method including at least: i) contacting a surface of a dielectric layer present on a substrate with a first gaseous precursor, by CVD, to form nanocrystal nuclei on the surface of a the dielectric layer; ii) contacting the nanocrystal nuclei with a second gaseous precursor, by CVD, to selectively deposit nanocrystal semi-conductor material only on the nuclei and to grow nanocrystals on the nuclei, each nanocrystal having an exposed surface; and iii) forming a nitride layer only on the exposed surface of each nanocrystal by contacting the nanocrystals with a mixture including at least the second gaseous precursor and a third gaseous precursor to terminate the growth of said nanocrystals and to selectively and stoichiometrically deposit the nitride layer on the exposed surface, wherein a material of said nanocrystal nuclei is compatible with a material of said dielectric layer, each of i), ii) and iii) are carried out in a same chamber, and the first gaseous precursor, the second gaseous precurso…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.