Method of manufacturing semiconductor device
US8338288B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2011 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | May 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In connection with a semiconductor device in which a conductive member is coupled to the surface of a bonding pad exposed from an opening formed in a passivation film, there is provided a technique able to suppress the occurrence of a crack in the passivation film. A second planar distance between a first end of an electrode layer and a first end of a pad is greater than a first planar distance between the first end of the electrode layer and a first end of an opening. Since the second planar distance between the first end of the electrode layer and the first end of the pad is long, even when a coupled position of wire is deviated to the first end side of the electrode layer, stress caused by coupling of the wire to a stepped portion of the electrode layer can be prevented from being transmitted to the first end portion of the pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.