Method for forming deep trench in semiconductor device
US8338309B2 · kind B2 · utility
0Cited by
6References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 16, 2009 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Dec 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a deep trench in a semiconductor device includes: forming a hard mask over a substrate, forming a hard mask pattern over the substrate through etching the hard mask to thereby expose an upper portion of the substrate, forming a first trench through a first etching the exposed substrate using a gas containing bromide and a gas containing chloride and forming a second trench through a second etching the first trench using of a gas containing sulfur and fluorine, wherein a depth of the second trench is deeper than a depth of the first trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.