Semiconductor device and method of manufacturing the same
US8338817B2 · kind B2 · utility
2Cited by
8References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2011 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Oct 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Any of a plurality of contact plugs which reaches a diffusion layer serving as a drain layer of an MOS transistor has an end provided in contact with a lower surface of a thin insulating film provided selectively on an interlayer insulating film. A phase change film constituted by GST to be a chalcogenide compound based phase change material is provided on the thin insulating film, and an upper electrode is provided thereon. Any of the plurality of contact plugs which reaches the diffusion layer serving as a source layer has an end connected directly to an end of a contact plug penetrating an interlayer insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.