Semiconductor device with (110)-oriented silicon
US8338886B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2011 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Dec 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vertical semiconductor device includes a bottom metal layer and a first P-type semiconductor layer overlying the bottom metal layer. The first P-type semiconductor layer is characterized by a surface crystal orientation of (110) and a first conductivity. The first P-type semiconductor layer is heavily doped. The vertical semiconductor device also includes a second P-type semiconductor layer overlying the first P-type semiconductor layer. The second semiconductor layer has a surface crystal orientation of (110) and is characterized by a lower conductivity than the first conductivity. The vertical semiconductor device also has a top metal layer overlying the second P-type semiconductor layer. A current conduction from the top metal layer to the bottom metal layer and through the second p-type semiconductor layer is characterized by a hole mobility along a <110> crystalline orientation and on (110) crystalline plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.