Solid-state imaging device
US8338901B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2010 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Dec 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8067
Abstract
Certain embodiments provide a solid-state imaging device including: a photoelectric converting unit that includes a semiconductor layer of a second conductivity type provided on a semiconductor substrate of a first conductivity type, converts incident light entering a first surface of the semiconductor substrate into signal charges, and stores the signal charges; a readout circuit that reads the signal charges stored by the photoelectric converting unit; an antireflection structure that is provided on the first surface of the semiconductor substrate to cover the semiconductor layer of the photoelectric converting unit, includes a fixed charge film that retains fixed charges being non-signal charges, and prevents reflection of the incident light; and a hole storage region that is provided between the photoelectric converting unit and the antireflection structure, and stores holes being non-signal charges.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.