Uncooled infrared image sensor
US8338902B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2011 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Mar 31, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J5/064
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An uncooled infrared image sensor according to an embodiments includes: a plurality of pixel cells formed in a first region on a semiconductor substrate; a reference pixel cell formed in a second region on the semiconductor substrate and corresponding to each row or each column of the pixel cells; a supporting unit formed for each of the pixel cell and supporting a corresponding pixel cell; and an interconnect unit formed for each reference pixel cell. Each of the pixel cells includes: a first infrared absorption film and a first heat sensitive element. The reference pixel cell includes: a second infrared absorption film and a second heat sensitive element, the second heat sensitive element having the same characteristics as characteristics of the first heat sensitive element. The third and fourth interconnects of the interconnect unit have the same electrical resistance as electrical resistance of the first and second interconnects of the supporting unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.