Semiconductor apparatus and fabrication method thereof
US8338954B2 · kind B2 · utility
3Cited by
1References
1Claims
0Family size
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Key dates
| Filing date | Aug 18, 2010 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Nov 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor apparatus includes an aluminum electrode film formed on a semiconductor chip; and a nickel plated layer formed on the aluminum electrode film, wherein a concentration of sodium and potassium present in the nickel plated layer and at an interface between the nickel plated layer and the aluminum electrode film is 3.20×1014 atoms/cm2 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.