Non-volatile semiconductor memory device including a variable resistance element
US8339834B2 · kind B2 · utility
15Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2010 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Mar 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8845
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a non-volatile semiconductor memory device includes: a first line; a second line intersecting with the first line; and a memory cell arranged at a position where the second line intersects with the first line, wherein, the memory cell includes: a variable resistance element; and a negative resistance element connected in series to the variable resistance element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.