Non-volatile memory
US8339842B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 28, 2010 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Jun 16, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Non-volatile memories can have data retention problems at high temperatures reducing the reliability of such devices. A non-volatile memory cell is described having a magnet, a ferromagnetic switching element and heating means. The non-volatile memory cell has a set position having a low resistance state and a reset position having a high resistance state. The non-volatile memory is set by applying a magnetic field to the switching element causing it to move to the set position. The non-volatile memory cell is reset by the heating means which causes the switching element to return to the reset position. The switching element is formed from a ferromagnetic material or a ferromagnetic shape memory alloy. This structure can have improved reliability at higher temperatures than previously described non-volatile memories.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.