Microwave circuit
US8340145B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2010 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | May 31, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2302/02
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A microwave circuit includes at least one inductive portion and at least one capacitive portion and having a resonance frequency, the microwave circuit including a material which acts as a dielectric for the capacitive portion, characterized in that the material acting as a dielectric includes an active region that is an electrically pumped semiconductor heterostructure having at least two energy levels whose energy separation is close to the resonance frequency of the microwave circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.