Patent · US Active

Microwave circuit

US8340145B2 · kind B2 · utility

1Cited by
2References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 31, 2010
Grant dateDec 25, 2012
Priority date
Expiry dateMay 31, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S2302/02
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A microwave circuit includes at least one inductive portion and at least one capacitive portion and having a resonance frequency, the microwave circuit including a material which acts as a dielectric for the capacitive portion, characterized in that the material acting as a dielectric includes an active region that is an electrically pumped semiconductor heterostructure having at least two energy levels whose energy separation is close to the resonance frequency of the microwave circuit.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.