Gallium formulated ink and methods of making and using same
US8343267B2 · kind B2 · utility
1Cited by
6References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2011 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Feb 27, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/541
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gallium formulated ink is provided. Also provided are methods of preparing the gallium formulated ink and for using the gallium formulated ink to deposit a Group 1b/gallium/(optional indium)/Group 6a material on a substrate for use in the manufacture of a variety of chalcogenide containing semiconductor materials, such as, thin film transistors (TFTs), light emitting diodes (LEDs); and photoresponsive devices (e.g., electrophotography (e.g., laser printers and copiers), rectifiers, photographic exposure meters and photovoltaic cells) and chalcogenide containing phase change memory materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.