Light emitting device and manufacturing method thereof

US8343788B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• De-Shan Kuo · Hsinchu, TW
• Ting-Chia Ko · Hsinchu, TW
• Chun-Hsiang Tu · Hsinchu, TW

Key dates

• Filing date: Apr 19, 2011
• Grant date: Jan 1, 2013
• Expiry date: Apr 19, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/01

Abstract

A method of fabricating a light emitting device comprising: providing a substrate; forming an epitaxial stack on the substrate wherein the epitaxial stack comprising a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer; forming a mesa on the epitaxial stack to expose partial of the first conductivity semiconductor layer; and etching the surface of the first conductivity semiconductor layer and forming a least one rough structure on the surface of the first conductivity semiconductor layer wherein the first conductivity semiconductor layer is sandwiched by the substrate and the active layer.