Method for manufacturing lateral germanium detectors

US8343792B2 · kind B2 · utility

Assignee

• BAE Systems Information and Electronic Systems Integration Inc. · US

Inventors

• Daniel N. Carothers · Oro Valley, US
• Craig M. Hill · Warrenton, US
• Andrew T. S. Pomerene · Redding, US
• Vu A. Vu · Falls Church, US
• Robert L. Kamocsai · Manassas, US
• Timothy J. Conway · Gainesville, US

Key dates

• Filing date: Oct 27, 2008
• Grant date: Jan 1, 2013
• Expiry date: Nov 21, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/1935

Abstract

An improved method for manufacturing a lateral germanium detector is disclosed. A detector window is opened through an oxide layer to expose a doped single crystalline silicon layer situated on a substrate. Next, a single crystal germanium layer is grown within the detector window, and an amorphous germanium layer is grown on the oxide layer. The amorphous germanium layer is then polished to leave only a small portion around the single crystal germanium layer. A dielectric layer is deposited on the amorphous germanium layer and the single crystal germanium layer. Using resist masks and ion implants, multiple doped regions are formed on the single crystal germanium layer. After opening several oxide windows on the dielectric layer, a refractory metal layer is deposited on the doped regions to form multiple germanide layers.