Thin film transistor and method of producing thin film transistor
US8343800B2 · kind B2 · utility
69Cited by
0References
9Claims
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Assignee
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Key dates
| Filing date | Jun 15, 2010 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | May 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02675
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a thin film transistor comprising an active layer, the active layer comprising an IGZO-based oxide material, the IGZO-based oxide material being represented by a composition formula of In2-xGaxZnO4-δ, where 0.75<x<1.10 and 0<δ≦1.29161×exp(−x/0.11802)+0.00153 and being formed from a single phase of IGZO having a crystal structure of YbFe2O4, and a method of producing the thin film transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.