Monolithic microwave integrated circuit device and method for forming the same
US8343843B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 7, 2010 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Apr 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/824
Abstract
Provided are a monolithic microwave integrated circuit device and a method for forming the same. The method include: forming an HBT on a substrate; forming a wiring of the HBT and a bottom electrode of a capacitor on the substrate, with a first metal, the bottom electrode being spaced apart from the HBT; forming a first insulation layer on the substrate to cover the HBT and the bottom electrode; and forming a top electrode of the capacitor on the first insulation layer and forming a resistance pattern on the substrate, with a second metal, the resistance pattern being spaced apart from the capacitor, wherein an edge of the top electrode is spaced apart from an edge of the bottom electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.