Method for manufacturing capacitor of semiconductor device and capacitor of semiconductor device manufactured thereby
US8343844B2 · kind B2 · utility
9Cited by
1References
12Claims
0Family size
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Key dates
| Filing date | Mar 25, 2011 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Apr 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A method of manufacturing a capacitor of a semiconductor device includes forming a high-k dielectric pattern on a semiconductor substrate, the high-k dielectric pattern having a pillar shape including a hole therein, forming a lower electrode in the hole of the high-k dielectric pattern, locally forming a blocking insulating pattern on an upper surface of the lower electrode, and forming an upper electrode covering the high-k dielectric pattern and the blocking insulating pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.