Methods of manufacturing capacitor structures and methods of manufacturing semiconductor devices using the same
US8343845B2 · kind B2 · utility
15Cited by
1References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2010 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Jul 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A capacitor structure includes a plurality of lower electrodes on a substrate, the lower electrodes having planar top surfaces and being arranged in a first direction to define a lower electrode column, a plurality of lower electrode columns being arranged in a second direction perpendicular to the first direction to define a lower electrode matrix, a plurality of supports on upper sidewalls of at least two adjacent lower electrodes, a dielectric layer on the lower electrodes and the supports, and an upper electrode on the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.