Semiconductor wafer, semiconductor device using the same, and method and apparatus for producing the same
US8343853B2 · kind B2 · utility
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2References
7Claims
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Key dates
| Filing date | Oct 1, 2009 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Jan 6, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of processing a semiconductor wafer includes preheating the wafer to a preheating temperature that is less than a peak temperature, heating the wafer from the preheating temperature to the peak temperature at a first ramp rate that averages about 100° C. per second or more, and, immediately after heating the wafer from the preheating temperature to the peak temperature, cooling the wafer at a second ramp rate that averages about −70° C. per second or more from the peak temperature to the preheating temperature, wherein the peak temperature is about 1,100° C. or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.