Patent · US Active

Nanostructured device

US8343855B2 · kind B2 · utility

0Cited by

2References

39Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Pierre Mur · Crolles, FR
Cécile Oillic · Saint-Jacques-de-la-Lande, FR

Key dates

Filing date	Nov 24, 2006
Grant date	Jan 1, 2013
Priority date	—
Expiry date	Sep 14, 2029

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/53
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

The invention concerns a nanostructured device (100) comprising a substrate (101), an intermediate layer (102), a zone (103) consisting of multiple three-dimensional structured sites (104) made of semiconductor material, having chemical species (106) fixed to the surface of said three-dimensional nanostructured sites (104). The inventive device is useful for making a biochip and an electronic memory. The invention also concerns a method for forming an electronic memory.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.