Patent · US Active

Nanoimprint resist, nanoimprint mold and nanoimprint lithography

US8344065B2 · kind B2 · utility

7Cited by

3References

6Claims

0Family size

Assignees

TSINGHUA UNIVERSITY · CN
HON HAI PRECISION INDUSTRY CO., LTD. · TW

Inventors

Zhen-Dong Zhu · Beijing, CN
Qun Li · Beijing, CN
Li Zhang · Beijing, CN
Mo Chen · Beijing, CN

Key dates

Filing date	Mar 5, 2010
Grant date	Jan 1, 2013
Priority date	—
Expiry date	Sep 6, 2030

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/31855
WIPO fieldMacromolecular chemistry, polymers
WIPO sectorChemistry

Abstract

A nanoimprint resist includes a hyperbranched polyurethane oligomer (HP), a perfluoropolyether (PFPE), a methylmethacrylate (MMA), and a diluent solvent. A method of a nanoimprint lithography is also provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.