Spin-polarized electron source
US8344354B2 · kind B2 · utility
0Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2009 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Mar 24, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/26
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A spin-polarized electron generating device includes a substrate, a buffer layer, a strained superlattice layer formed on the buffer layer, and an intermediate layer formed of a crystal having a lattice constant greater than a lattice constant of a crystal of the buffer layer, the intermediate layer intervening between the substrate and the buffer layer. The buffer layer includes cracks formed in a direction perpendicular to the substrate by tensile strain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.