Semiconductor material, method of making the same, and semiconductor device
US8344356B2 · kind B2 · utility
10Cited by
1References
11Claims
0Family size
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Key dates
| Filing date | Dec 17, 2008 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Oct 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/815
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor material is provided comprising: a composition graded layer, formed on a Si substrate or an interlayer formed thereon, comprising a composition of AlXGa1-XN graded such that a content ratio of Al in the composition decreases continuously or discontinuously in a crystal growing direction; a superlattice composite layer, formed on the composition graded layer, comprising a high Al-containing layer comprising a composition of AlYGa1-YN and a low Al-containing layer comprising a composition of AlZGa1-ZN that are laminated alternately; and a nitride semiconductor layer formed on the superlattice composite layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.