Light-emitting diode and manufacturing method thereof
US8344395B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 7, 2010 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Dec 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
Abstract
A method for manufacturing a light-emitting diode includes the steps of: growing a light-emitting diode structure-forming semiconductor layer of a compound semiconductor having a zincblende crystal structure on a first substrate formed of a compound semiconductor having a zincblende crystal structure and that has a principal surface tilted in a [110] direction with respect to a (001) plane; bonding the first substrate to a second substrate on the side of the semiconductor layer; removing the first substrate so as to expose the semiconductor layer; forming an etching mask on the exposed surface of the semiconductor layer in a rectangular planar shape so that a longer side extends in a [110] or [−1-10] direction, and that a shorter side extends in a [−110] or [1-10] direction; and patterning the semiconductor layer by wet etching using the etching mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.