Optoelectronic device and method for manufacturing the same
US8344409B2 · kind B2 · utility
7Cited by
5References
20Claims
0Family size
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Key dates
| Filing date | Jul 7, 2011 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Jul 7, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/52
Abstract
An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.