Semiconductor light emitting device
US8344414B2 · kind B2 · utility
2Cited by
2References
4Claims
0Family size
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Key dates
| Filing date | Jul 12, 2010 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Jan 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/81
Abstract
A semiconductor light emitting device with which a driving voltage is able to be kept low is provided. The semiconductor light emitting device includes: an n-type cladding layer; an active layer; a p-type cladding layer containing AlGaInP; an intermediate layer; and a contact layer containing GaP in this order, wherein the intermediate layer contains Ga1-aInaP (0.357≦a≦0.408), and has a thickness of from 10 nm to 20 nm both inclusive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.