Enhancement-mode gallium nitride high electron mobility transistor
US8344420B1 · kind B1 · utility
7Cited by
8References
14Claims
0Family size
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Key dates
| Filing date | Jul 24, 2009 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Jan 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/84
Abstract
Embodiments include but are not limited to apparatuses and systems including a heterostructure having a first barrier layer, a gallium nitride channel layer on the first barrier layer, and a second barrier layer on the gallium nitride channel layer and including a first sublayer, a second sublayer, and a third sublayer. The first barrier layer, the first sublayer, and the third sublayer may each include aluminum. Other embodiments may be described and claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.