Group III-nitride enhancement mode field effect devices and fabrication methods
US8344421B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 2010 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Jan 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
Abstract
Structures and fabrication processes are described for group III-nitride enhancement mode field effect devices in which a two-dimensional electron gas is present at or near the interface between a pair of active layers that include a group III-nitride barrier layer and a group III-nitride semiconductor layer. The barrier layer has a band gap wider than the band gap of the adjacent underlying semiconductor layer. The two-dimensional electron gas is induced by providing one or more layers disposed over the barrier layer. A gate electrode is in direct contact with the barrier layer. Ohmic contacts for source and drain electrodes are in direct contact either with the barrier layer or with a semiconductor nitride layer disposed over the barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.