Image sensor having reduced dark current
US8344431B2 · kind B2 · utility
4Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2011 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Apr 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
An image sensor includes a light receiving device, a field effect transistor, a stress layer pattern, and a surface passivation material. The light receiving device is formed in a first region of a substrate. The field effect transistor is formed in a second region of the substrate. The stress layer pattern is formed over the field effect transistor for creating stress therein to improve transistor performance. The surface passivation material is formed on the first region of the substrate for passivating dangling bonds at the surface of the light receiving device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.