Semiconductor device and fabrication method thereof
US8344508B2 · kind B2 · utility
13Cited by
2References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 22, 2009 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Nov 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a metal-containing compound layer on a semiconductor substrate; a dielectric film on the semiconductor substrate and the metal-containing compound layer; a contact hole penetrating through the dielectric film to reach the metal-containing compound layer; a contact plug in the contact hole. The semiconductor device further includes a manganese oxide layer extending between the contact plug and respective one of the dielectric film and the metal-containing compound layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.