CMOS image sensor
US8345136B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2008 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Aug 5, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/147
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A CMOS (Complementary Metal-Oxide Semiconductor) image sensor is provided. A CMOS image sensor includes a first light-receiving unit converting light into charge, a first floating diffusion region, in which a first potential corresponding to the converted amount of charge is generated and a second floating diffusion region, to which the charge in the first floating diffusion region is transmitted, and in which a second potential is generated, wherein a wide dynamic range signal is acquired from the first floating diffusion region, a high-sensitively signal is acquired from the second floating diffusion region, and the acquired signals are synthesized and output.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.