Ferromagnetic thin wire element
US8345473B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 21, 2008 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Feb 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention uses a ferromagnetic thin wire having a domain wall inside, with the magnetic moment at the center thereof being perpendicular to the longitudinal axis of the thin wire. With the domain wall being fixed by a domain wall fixation device (e.g. antiferromagnetic thin wires) so that the domain wall is prevented from moving in the ferromagnetic thin wire, when a direct current is supplied, the magnetic moment rotates in the immobilized domain wall. This rotation of the moment can be detected by a TMR element or the like. This configuration of the ferromagnetic thin wire element can be directly used to create a microwave oscillator or magnetic memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.