Patent · US Active

Sense amplifier

US8345498B2 · kind B2 · utility

1Cited by

1References

20Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Sergiy Romanovskyy · Ottawa, CA
Muhammad Nummer · Ottawa, CA

Key dates

Filing date	Feb 17, 2011
Grant date	Jan 1, 2013
Priority date	—
Expiry date	Jul 3, 2031

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/4094
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A sense amplifier includes a first PMOS transistor, a second PMOS transistor, a third PMOS transistor, a fourth PMOS transistor, a first NMOS transistor, a second NMOS transistor, a third NMOS transistor, and a fourth NMOS transistor. The first PMOS transistor, the second PMOS transistor, the first NMOS transistor, and the second NMOS transistor form cross coupled sensing pairs. The third PMOS and the fourth PMOS transistors serve as compensation transistors. The third NMOS and the fourth NMOS transistors serve as sensing enabling transistors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.