Photoelectric device using PN diode and silicon integrated circuit (IC) including the photoelectric device
US8346026B2 · kind B2 · utility
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2References
15Claims
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Inventors
Key dates
| Filing date | Aug 7, 2007 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Jun 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/10
Abstract
Provided are a photoelectric device using a PN diode and a silicon integrated circuit (IC) including the photoelectric device. The photoelectric device includes: a substrate; and an optical waveguide formed as a PN diode on the substrate, wherein a junction interface of the PN diode is formed in a direction in which light advances; and an electrode applying a reverse voltage to the PN diode, wherein N-type and P-type semiconductors of the PN diode are doped at high concentrations and the doping concentration of the N-type semiconductor is higher than or equal to that of the P-type semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.