Systems and methods for fast state modification of at least a portion of non-volatile memory
US8347029B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2007 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Apr 13, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2212/7211
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method is provided for reducing the number of writes in a non-volatile memory (122). The method involves writing data in the non-volatile memory and determining a set of data from the data in the non-volatile memory to be written to a removable memory (126) that is operatively coupled to the non-volatile memory (e.g., a NAND memory). The method also involves writing the set of data to the removable memory (e.g., a hard disk) from the non-volatile memory. The method further involves writing a delineation marker (e.g., a sequence number) to the non-volatile memory specifying that the set of data has been written to the removable memory. Notably, the metadata of the data in the non-volatile memory comprises at least one marker set as a specific marker type (e.g., a valid marker and a dirty marker).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.