Vapor-phase process apparatus, vapor-phase process method, and substrate
US8349083B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2011 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | Oct 11, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31504
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.