Semiconductor device manufacturing method
US8349541B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2011 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | Aug 26, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70091
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The semiconductor device manufacturing method comprises the step of transferring patterns formed on a reticle to a semiconductor substrate by an exposure with oblique incidence illumination. In the step of making the exposure with oblique incidence illumination, the exposure is made with an aperture stop 16 including a first ring-shaped aperture 22, and a plurality of second apertures 24a1-24a4 formed around the first ring-shaped aperture 22. The exposure is made with an aperture stop 16 having the first ring-shaped aperture 22 which can transfer patterns arranged at a medium pitch to a relatively large pitch with a relatively high resolution and the second aperture 24a1-24a4 which can transfer patterns arranged at a relatively small pitch with a relatively high resolution, whereby even when the patterns are arranged at various pitch values, the DOF can be surely sufficient, and the patterns can be stably transferred.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.