Method for treating a metal oxide layer
US8349642B2 · kind B2 · utility
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1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2009 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | Apr 6, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to a method for treating a metal oxide layer deposited on a substrate. The method comprises the step of applying a substantially atmospheric plasma process at a relatively low temperature. Preferably, the temperature during the plasma process is lower than approximately 180° C. Further, the atmospheric plasma process can be applied in a plasma chamber comprising H2 gas and He gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.