Method of producing plurality of organic transistors using laser patterning
US8349673B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2006 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | Sep 4, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/151
Abstract
A method of producing a plurality of transistors each including a source/drain electrode pair comprising a conductor material and a channel comprising semiconductor material between the source and drain electrodes of said source/drain electrode pair; the method comprising (i) forming over a substrate at least a first layer of said conductor material or a precursor thereto and a second layer of said semiconductor material or a precursor thereto; and (ii) thereafter removing selected portions of at least said first and second layers so as to define at least two adjacent source/drain electrode pairs that are unconnected to each other within said first and second layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.