Patent · US Active

Method of producing plurality of organic transistors using laser patterning

US8349673B2 · kind B2 · utility

0Cited by
3References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 3, 2006
Grant dateJan 8, 2013
Priority date
Expiry dateSep 4, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K85/151

Abstract

A method of producing a plurality of transistors each including a source/drain electrode pair comprising a conductor material and a channel comprising semiconductor material between the source and drain electrodes of said source/drain electrode pair; the method comprising (i) forming over a substrate at least a first layer of said conductor material or a precursor thereto and a second layer of said semiconductor material or a precursor thereto; and (ii) thereafter removing selected portions of at least said first and second layers so as to define at least two adjacent source/drain electrode pairs that are unconnected to each other within said first and second layers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.