Implanted metal silicide for semiconductor device
US8349732B2 · kind B2 · utility
2Cited by
14References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2008 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | Nov 2, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device and a method for forming a metal silicide is presented. A device, which includes a gate region, a source region, and a drain region, is formed on a substrate. A metal is disposed on the substrate, followed by a first anneal, forming a metal silicide on at least one of the gate region, the source region, and the drain region. The unreacted metal is removed from the substrate. The metal silicide is implanted with atoms. The implant is followed by a super anneal of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.