Patent · US Active

Chain scission polyester polymers for photoresists

US8349990B2 · kind B2 · utility

0Cited by

3References

26Claims

0Family size

Assignee

The Research Foundation of the State University of New York · US

Inventors

Robert L. Brainard · Albany, US
Srividya Revuru · Niskayuna, US

Key dates

Filing date	Feb 20, 2009
Grant date	Jan 8, 2013
Priority date	—
Expiry date	Feb 20, 2029

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC08G63/68
WIPO fieldMacromolecular chemistry, polymers
WIPO sectorChemistry

Abstract

Polymers for extreme ultraviolet and 193 nm photoresists are disclosed. The polymers comprise a photoacid generator (PAG) residue, an acid cleavable residue and a diacid joined by ester linkages. The polymers include a photoacid generating diol, a diacid and an acid table diol.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.