Bulk acoustic resonator comprising non-piezoelectric layer and bridge
US8350445B1 · kind B1 · utility
10Cited by
317References
11Claims
0Family size
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Key dates
| Filing date | Jun 24, 2011 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | Jun 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/021
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A bulk acoustic wave (BAW) resonator, comprises: a first electrode formed on a substrate; a piezoelectric layer formed on the first electrode; a second electrode formed on the first piezoelectric layer; a non-piezoelectric layer formed on the first electrode and adjacent to the piezoelectric layer; and a bridge formed between the non-piezoelectric layer and the first or second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.