Patent · US Active

Field electron emission source

US8350459B2 · kind B2 · utility

4Cited by
5References
11Claims
0Family size

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Key dates

Filing dateJul 25, 2008
Grant dateJan 8, 2013
Priority date
Expiry dateJun 27, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2203/0272
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A method for manufacturing a field electron emission source includes: providing an insulating substrate; patterning a cathode layer on at least one portion of the insulating substrate; forming a number of emitters on the cathode layer; coating a photoresist layer on the insulating substrate, the cathode layer and the emitters; exposing predetermined portions of the photoresist layer to radiation, wherein the exposed portions are corresponding to the emitters; forming a mesh structure on the photoresist layer; and removing the exposed portions of photoresist layer. The method can be easily performed and the achieved the field electron emission source has a high electron emission efficiency.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.