Patent · US Active

Optoelectronic semiconductor element

US8351479B2 · kind B2 · utility

8Cited by

10References

15Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Stephan Lutgen · Regensburg, DE
Peter Brick · Regensburg, DE
Tony Albrecht · Bad Abbach, DE

Key dates

Filing date	Mar 15, 2007
Grant date	Jan 8, 2013
Priority date	—
Expiry date	Nov 6, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/4031
WIPO fieldOptics
WIPO sectorInstruments

Abstract

An optoelectronic semiconductor component has a semiconductor body (1) comprising a surface emitting vertical emitter region (2) comprising a vertical emitter layer (3), at least one pump source (4) provided for optically pumping the vertical emitter layer (3), and a radiation passage area (26) through which electromagnetic radiation (31) generated in the vertical emitter layer leaves the semiconductor body (1), wherein the pump source (4) and the vertical emitter layer (3) are at a distance from one another in a vertical direction.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.