Patent · US Active

Germanium films by polymer-assisted deposition

US8354046B2 · kind B2 · utility

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1References

3Claims

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Assignee

LOS ALAMOS NATIONAL SECURITY, LLC · US

Inventors

Quanxi Jia · Los Alamos, US
Anthony K. Burrell · Los Alamos, US
Eve Bauer · Los Alamos, US
Filip Ronning · Los Alamos, US
Thomas Mark McCleskey · Los Alamos, US
Guifu Zou · Los Alamos, US

Key dates

Filing date	Sep 11, 2009
Grant date	Jan 15, 2013
Priority date	—
Expiry date	Mar 31, 2031

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC23C18/1279
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

Highly ordered Ge films are prepared directly on single crystal Si substrates by applying an aqueous coating solution having Ge-bound polymer onto the substrate and then heating in a hydrogen-containing atmosphere. A coating solution was prepared by mixing water, a germanium compound, ethylenediaminetetraacetic acid, and polyethyleneimine to form a first aqueous solution and then subjecting the first aqueous solution to ultrafiltration.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.