Method for manufacturing gallium nitride wafer
US8354289B2 · kind B2 · utility
2Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2011 |
| Grant date | Jan 15, 2013 |
| Priority date | — |
| Expiry date | Feb 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02664
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a gallium nitride (GaN) wafer is provided. In the method for manufacturing the GaN wafer according to an embodiment, an etch stop layer is formed on a substrate, and a first GaN layer is formed on the etch stop layer. A portion of the first GaN layer is etched with a silane gas, and a second GaN layer is formed on the etched first GaN layer. A third GaN layer is formed on the second GaN layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.