Methods of forming micro-electromichanical resonators having boron-doped resonator bodies containing eutectic alloys
US8354332B2 · kind B2 · utility
1Cited by
7References
11Claims
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Key dates
| Filing date | Sep 30, 2009 |
| Grant date | Jan 15, 2013 |
| Priority date | — |
| Expiry date | Dec 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2007/006
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A micro-electromechanical resonator includes a resonator body having a semiconductor region therein doped with boron to a level greater than about 1×1018 cm−3 and even greater than about 1×1019 cm−3, in order to obtain reductions in the temperature coefficient of frequency (TCF) of the resonator over a relatively large temperature range. Still further improvements in TCF can be achieved by degenerately doping the resonator body with boron and/or by boron-assisted aluminum doping of the resonator body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.