Semiconductor device and method of manufacturing the same
US8354712B2 · kind B2 · utility
0Cited by
1References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 9, 2011 |
| Grant date | Jan 15, 2013 |
| Priority date | — |
| Expiry date | Mar 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A body contact layer 18 is formed on the side of a recessed structure 17 as well as in the bottom of the recessed structure 17, so that a contact area between the body contact layer 18 and a well layer 12 is increased and the amount of dopant implanted to the body contact layer 18 is suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.