Patent · US Active

Nanocrystals including a group IIIA element and a group VA element, method, composition, device and other products

US8354785B2 · kind B2 · utility

31Cited by
56References
49Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 21, 2009
Grant dateJan 15, 2013
Priority date
Expiry dateAug 6, 2029

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/2991
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

A nanocrystal comprising a semiconductor material comprising one or more elements of Group IIIA of the Periodic Table of Elements and one or more elements of Group VA of the Periodic Table of Elements, wherein the nanocrystal is capable of emitting light having a photoluminescence quantum efficiency of at least about 30% upon excitation. Also disclosed is a nanocrystal including a core comprising a first semiconductor material comprising one or more elements of Group IIIA of the Periodic Table of Elements and one or more elements of Group VA of the Periodic Table of Elements, and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the nanocrystal is capable of emitting light having a photoluminescence quantum efficiency of at least about 30% upon excitation. Also disclosed is a nanocrystal comprising a nanocrystal core and a shell comprising a semiconductor material disposed on at least a portion of the nanocrystal core, wherein the semiconductor material comprises at least three chemical elements and is obtainable by a process comprising adding a precursor for at least one of the chemical elements of the semiconductor…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.